Analog circuits in ultra-deep-submicron CMOS
نویسندگان
چکیده
منابع مشابه
Leakage Current in Deep-Submicron CMOS Circuits
The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power, especially in the low power application...
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 2005
ISSN: 0018-9200
DOI: 10.1109/jssc.2004.837247